NP55N055SDG
240
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
FORWARD TRANSFER CHARACTERISTICS
220
200
180
160
140
120
100
80
Pulsed
V GS = 10 V
4.5 V
100
10
1
0.1
V DS = 10 V
Pulsed
T A = ? 55°C
? 25°C
25°C
75°C
125°C
150°C
60
40
20
0
0.01
0.001
175°C
0
1
2
3
4
5
6
0
1
2
3
4
5
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
2.5
100
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T A = ? 55°C
25°C
125°C
2.0
1.5
1.0
0.5
V GS = V DS
10
1
175°C
V DS = 10 V
0
I D = 250 μ A
0
Pulsed
-100
-50
0
50
100
150
200
0.1
1
10
100
1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
18
16
14
12
10
8
6
4
2
0
Pulsed
V GS = 4.5 V
10 V
18
16
14
12
10
8
6
4
2
0
I D = 44 A
28 A
11 A
Pulsed
1
10
100
1000
0
2
4
6
8
10 12 14 16 18 20
4
I D - Drain Current - A
Data Sheet D16864EJ2V0DS
V GS - Gate to Source Voltage - V
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相关代理商/技术参数
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NP55N055SUG-E1-AY 功能描述:MOSFET N-CH 55V 55A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP55N055SUG-E1-AY/K 制造商:Renesas Electronics Corporation 功能描述:
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